Extraction of the voltage-dependent quantum capacitance and kinetic inductance of GNRFETs: a first-principles study

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dc.contributor.authorYamaçlı, Serhan
dc.date.accessioned2025-02-24T17:19:01Z
dc.date.available2025-02-24T17:19:01Z
dc.date.issued2015
dc.departmentFakülteler, Mühendislik Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü
dc.description.abstractGraphene nanoribbon field effect transistors (GNRFETs) are prominent candidates for the near future nanoelectronics technology. In thiswork, a sample GNRFET is simulated utilizing density functional theory with nonequilibrium Green's function formalism (NEGF) to obtain the current-voltage relationship, the variation of the channel charge and the electrostatic potential with respect to applied voltage. It is shown that a 5th order polynomial model, which can be utilized in circuit design tools, accurately models the current-voltage relationship of GNRFETs. More importantly, the variations of the kinetic inductance, quantum capacitance and the Fermi velocity dependent on both the source-drain (V-DS) and source-gate voltages (V-GS) are extracted. Numerical values of these parameters are found to be consistent with the theoretical and experimental average values existing in the literature. The paper is concluded with the discussion of the voltage-dependencies of the kinetic inductance and the quantum capacitance for the circuit design using GNRFETs.
dc.description.sponsorshipQuantumWise AS
dc.description.sponsorshipThe authors would like to thank to QuantumWise AS for their support.
dc.identifier.doi10.1007/s10825-014-0646-0
dc.identifier.endpage256
dc.identifier.issn1569-8025
dc.identifier.issn1572-8137
dc.identifier.issue1
dc.identifier.scopus2-s2.0-84951575071
dc.identifier.scopusqualityQ2
dc.identifier.startpage249
dc.identifier.urihttps://doi.org/10.1007/s10825-014-0646-0
dc.identifier.urihttps://hdl.handle.net/20.500.14440/963
dc.identifier.volume14
dc.identifier.wosWOS:000350554200028
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorYamacli, Serhan
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Computational Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250201
dc.subjectGNRFET
dc.subjectAb initio
dc.subjectCurrent-voltage relationship
dc.subjectKinetic inductance
dc.subjectQuantum capacitance
dc.titleExtraction of the voltage-dependent quantum capacitance and kinetic inductance of GNRFETs: a first-principles study
dc.typeArticle

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