Extraction of the voltage-dependent quantum capacitance and kinetic inductance of GNRFETs: a first-principles study

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Tarih

2015

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Springer

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Özet

Graphene nanoribbon field effect transistors (GNRFETs) are prominent candidates for the near future nanoelectronics technology. In thiswork, a sample GNRFET is simulated utilizing density functional theory with nonequilibrium Green's function formalism (NEGF) to obtain the current-voltage relationship, the variation of the channel charge and the electrostatic potential with respect to applied voltage. It is shown that a 5th order polynomial model, which can be utilized in circuit design tools, accurately models the current-voltage relationship of GNRFETs. More importantly, the variations of the kinetic inductance, quantum capacitance and the Fermi velocity dependent on both the source-drain (V-DS) and source-gate voltages (V-GS) are extracted. Numerical values of these parameters are found to be consistent with the theoretical and experimental average values existing in the literature. The paper is concluded with the discussion of the voltage-dependencies of the kinetic inductance and the quantum capacitance for the circuit design using GNRFETs.

Açıklama

Anahtar Kelimeler

GNRFET, Ab initio, Current-voltage relationship, Kinetic inductance, Quantum capacitance

Kaynak

Journal of Computational Electronics

WoS Q Değeri

Q3

Scopus Q Değeri

Q2

Cilt

14

Sayı

1

Künye