Modulation of the electronic transport properties of silicon nanotubes via hydrogenation ratio

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dc.contributor.authorYamaçlı, Serhan
dc.date.accessioned2025-02-24T17:18:59Z
dc.date.available2025-02-24T17:18:59Z
dc.date.issued2016
dc.departmentFakülteler, Mühendislik Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü
dc.description.abstractIn this work, electronic transport properties of hydrogenated silicon nanotubes (SiNTs) are studied using first-principles methods. Metallic (4,4) and (7, 7) SiNTs are simulated using density functional theory combined with non-equilibrium Green's function formalism. The current-voltage characteristics of these nanotubes are obtained for various hydrogenation ratios considering that hydrogenation provides stability to SiNT structures as studied in the literature. The transmission spectra of the investigated SiNT structures are also given and discussed in order to analyse and extend the obtained current-voltage behaviours. It is shown that the electronic transport properties of SiNTs can be modulated by their hydrogenation ratio and the same type of SiNT shows conducting, non-conducting and negative differential resistance characteristic with different hydrogenation ratios. Obtained results show that the electronic transport behaviours of SiNTs can be adjusted flexibly with hydrogenation which opens new possibilities to SiNT circuit design.
dc.identifier.doi10.1088/2053-1591/3/12/125013
dc.identifier.issn2053-1591
dc.identifier.issue12
dc.identifier.scopus2-s2.0-85007504190
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1088/2053-1591/3/12/125013
dc.identifier.urihttps://hdl.handle.net/20.500.14440/947
dc.identifier.volume3
dc.identifier.wosWOS:000391541900004
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorYamacli, Serhan
dc.language.isoen
dc.publisherIop Publishing Ltd
dc.relation.ispartofMaterials Research Express
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250201
dc.subjectsilicon nanotubes
dc.subjecthydrogenation ratio
dc.subjectnegative differential resistance
dc.titleModulation of the electronic transport properties of silicon nanotubes via hydrogenation ratio
dc.typeArticle

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