Investigation of the voltage-dependent transport properties of metallic silicon nanotubes (SiNTs): A first-principles study

[ X ]

Tarih

2014

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Elsevier

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Özet

Considering that the current microelectronics technology is built upon silicon, various nanoscale silicon structures are being investigated. In this study, voltage-dependent transmission characteristics of short silicon nanotubes (SiNTs) are investigated using first-principles methods. Density functional theory in conjunction with non-equilibrium Green's function formalism is utilized to simulate metallic (5,5) and (8,8) SiNTs in order to obtain their current-voltage characteristics. The variation of the SiNT resistance with the applied voltage is also given and discussed together with the change in the transmission spectra. It is shown that current-voltage characteristics of short metallic SiNTs show nonlinear behaviour due to the changes in their transmission spectra. Obtained results and characteristics have implications on nanoscale SiNT interconnect design. (C) 2014 Elsevier B.V. All rights reserved.

Açıklama

Anahtar Kelimeler

Silicon nanotubes (SiNTs), Current-voltage characteristics, Transmission spectrum

Kaynak

Computational Materials Science

WoS Q Değeri

Q2

Scopus Q Değeri

Q1

Cilt

91

Sayı

Künye