A Novel IGBT-Based Silicone Carbide Rectifier Design for Improved Energy Efficiency in Telco Data Centers

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dc.contributor.authorYalcin, Fatih
dc.contributor.authorKose, Huseyin
dc.contributor.authorSavaşçıhabeş, Asuman
dc.date.accessioned2025-02-24T17:18:56Z
dc.date.available2025-02-24T17:18:56Z
dc.date.issued2025
dc.departmentNuh Naci Yazgan
dc.description.abstractThis study presents a novel topology designed to enhance the energy efficiency and quality of IGBT-based high-frequency rectifiers, which are commonly used to supply the high DC power required in industrial applications. In the proposed design, traditional silicon semiconductors are replaced with advanced SiC semiconductors, resulting in reduced switching losses and improved energy quality due to higher frequency switching. The new topology also offers solutions to challenges such as inrush current, reverse energy flow, and high DC output voltage issues typically encountered in IGBT-based rectifiers. The goal is for this topology to maximize efficiency and applicability. The proposed design is simulated in the Simulink environment, with the results presented in the findings section. To highlight the advantages of the new topology, the electrical parameters of the widely used three-phase full-bridge IGBT rectifier topology are employed for comparison.
dc.description.sponsorshipPESS-Power Electronic System Solutions
dc.description.sponsorshipThis research was funded by PESS-Power Electronic System Solutions-a private company that produces various solutions in the field of power electronics.
dc.identifier.doi10.3390/en18020348
dc.identifier.issn1996-1073
dc.identifier.issue2
dc.identifier.scopus2-s2.0-85215948255
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.3390/en18020348
dc.identifier.urihttps://hdl.handle.net/20.500.14440/929
dc.identifier.volume18
dc.identifier.wosWOS:001405389800001
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherMdpi
dc.relation.ispartofEnergies
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_WOS_20250201
dc.subjectsilicon carbide
dc.subjectSiC
dc.subjectIGBT
dc.subjectNPC
dc.subjectrectifier
dc.subjectswitching
dc.subjecttelco
dc.subjectdata center
dc.subjectsoftstart
dc.titleA Novel IGBT-Based Silicone Carbide Rectifier Design for Improved Energy Efficiency in Telco Data Centers
dc.typeArticle

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