Voltage-Dependent Electronic Transport Properties of Reduced Graphene Oxide with Various Coverage Ratios

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dc.contributor.authorYamaçlı, Serhan
dc.date.accessioned2025-02-24T17:18:44Z
dc.date.available2025-02-24T17:18:44Z
dc.date.issued2015
dc.departmentFakülteler, Mühendislik Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü
dc.description.abstractGraphene is mainly implemented by these methods: exfoliating, unzipping of carbon nanotubes, chemical vapour deposition, epitaxial growth and the reduction of graphene oxide. The latter option has the advantage of low cost and precision. However, reduced graphene oxide (rGO) contains hydrogen and/or oxygen atoms hence the structure and properties of the rGO and intrinsic graphene are different. Considering the advantages of the implementation and utilization of rGO, voltage-dependent electronic transport properties of several rGO samples with various coverage ratios are investigated in this work. Ab initio simulations based on density functional theory combined with non-equilibrium Green's function formalism are used to obtain the current-voltage characteristics and the voltage-dependent transmission spectra of rGO samples. It is shown that the transport properties of rGO are strongly dependent on the coverage ratio. Obtained results indicate that some of the rGO samples have negative differential resistance characteristics while normally insulating rGO can behave as conducting beyond a certain threshold voltage. The reasons of the peculiar electronic transport behaviour of rGO samples are further investigated, taking the transmission eigenstates and their localization degree into consideration. The findings of this study are expected to be helpful for engineering the characteristics of rGO structures.
dc.identifier.doi10.1007/s40820-014-0017-1
dc.identifier.endpage50
dc.identifier.issn2311-6706
dc.identifier.issn2150-5551
dc.identifier.issue1
dc.identifier.pmid30464955
dc.identifier.scopus2-s2.0-84922277863
dc.identifier.scopusqualityQ1
dc.identifier.startpage42
dc.identifier.urihttps://doi.org/10.1007/s40820-014-0017-1
dc.identifier.urihttps://hdl.handle.net/20.500.14440/826
dc.identifier.volume7
dc.identifier.wosWOS:000348137900006
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.indekslendigikaynakPubMed
dc.institutionauthorYamacli, Serhan
dc.language.isoen
dc.publisherSpringer Heidelberg
dc.relation.ispartofNano-Micro Letters
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_WOS_20250201
dc.subjectReduced graphene oxide
dc.subjectCoverage ratio
dc.subjectNegative differential resistance
dc.titleVoltage-Dependent Electronic Transport Properties of Reduced Graphene Oxide with Various Coverage Ratios
dc.typeArticle

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